| Part Number | Package | Band(MHz) | Ppeak(W) | Pout(dBm) | Eff@Pout(%) | Power Gain(dB) | Status | Download |
|---|---|---|---|---|---|---|---|---|
| DF2H0040-185DF | 360F1 | DC~4000 | 185 | 53.7 | 73.6 | 15.1 | Engineering Sample | |
| DF2H0040-135DF | 360F1 | DC~4000 | 135 | 51.6 | 78.5 | 19.0 | Engineering Sample | |
| DF2H0040-95DF | 360F1 | DC~4000 | 95.0 | 50.5 | 77.4 | 18.3 | Engineering Sample | |
| DF2H0060-45CF | 200P1 | DC~6000 | 45.0 | 47.5 | 75.5 | 19.3 | Engineering Sample | |
| DF2H0060-20DF | 200F1 | DC~6000 | 20.0 | 44.7 | 76.5 | 20.0 | Engineering Sample | |
| DF2H0060-20CF | 200P1 | DC~6000 | 20.0 | 44.7 | 76.5 | 20.0 | Engineering Sample | |
| DXG2CH50A-450EF* | 780P2 | 4800~5000 | 450 | 47.5 | 43.0 | 12.0 | Engineering Sample | |
| DXG1CH25P-320EF | 780P2 | 2435~2465 | 320 | 55.0 | 75.0 | 14.0 | Released Product | |
| DXG1CH08A-540EF* | 780P2 | 758~821 | 57.0 | 49.0 | 58.0 | 18.0 | Released Product | |
| DXG2CH22A-520EF* | 780P2 | 2110~2170 | 57.1 | 49.0 | 58.2 | 14.8 | Released Product | |
| DXG1CH27A-200EF* | 780P2 | 2496~2690 | 53.4 | 45.0 | 50.0 | 14.1 | Released Product | |
| DXG2CH27A-500EFV* | 780P2 | 2500~2700 | 56.7 | 47.2 | 52.9 | 15.0 | Released Product | |
| DXG1CH38A-200EF* | 780P2 | 3300~3800 | 53.0 | 44.5 | 45.0 | 15.3 | Released Product | |
| DXG2CH38A-450EFV* | 780P2 | 3300~3800 | 56.7 | 47.5 | 46.0 | 14.5 | Released Product | |
| DXG1CHD8A-F2EF* | 780P2 | 3300~3800 | 56.5 | 48.5 | 42.0 | 14.0 | Released Product | |
| DXG2CH50A-200EF* | 780P2 | 4800~5000 | 53.2 | 44.5 | 44.2 | 14.2 | Released Product | |
| DOD1H0015-1800EF | 1230P2 | 915 | 1800 | 61.5 | 79.0 | 18.0 | Released Product | |
| DOD1H2425-600EF | 1230P2 | 2435~2465 | 600 | 57.4 | 73.5 | 14.7 | Released Product |
DF2H0040-185DF is a 185 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 4000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat1 @ 2600 MHz | 53.7 | dBm |
Power Gain2 @ 2600 MHz | 15.1 | dB |
Efficiency2 @ 2600 MHz | 73.6 | % |
Note: Measured in the DF2H0040-185DF application circuit, test condition: VDS = 48 V, IDQ = 400 mA,Pulse width = 100 μs, Duty cycle = 10 %.
1.Test condition: Based on Maximum Output Power.
2 .Test condition: Based on Maximum Drain Efficiency.
DF2H0040-135DF is a 135 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 4000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat1 @ 2500 MHz | 51.6 | dBm |
Power Gain2 @ 2500 MHz | 19.0 | dB |
Efficiency2 @ 2500 MHz | 78.5 | % |
Note: Measured in the DF2H0040-135DF application circuit, test condition: VDS = 48 V, IDQ = 360 mA,Pulse width = 100 μs, Duty cycle = 10 %.
1.Test condition: Based on Maximum Output Power.
2 .Test condition: Based on Maximum Drain Efficiency.
DF2H0040-95DF is a 95 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 4000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat1 @ 2500 MHz | 50.5 | dBm |
Power Gain2 @ 2500 MHz | 18.3 | dB |
77.4Efficiency2 @ 2500 MHz | 77.4 | % |
Note: Measured in the DF2H0040-95DF application circuit, test condition: VDS = 48 V, IDQ = 200 mA,Pulse width = 100 μs, Duty cycle = 10 %.
1.Test condition: Based on Maximum Output Power.
2 .Test condition: Based on Maximum Drain Efficiency.
DF2H0060-45CF is a 45 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat1 @ 2600 MHz | 47.5 | dBm |
Power Gain2 @ 2600 MHz | 19.3 | dB |
Efficiency2 @ 2600 MHz | 75.5 | % |
Note: Measured in the DF2H0060-45CF application circuit, test condition: VDS = 48 V, IDQ = 80 mA,Pulse width = 100 μs, Duty cycle = 10 %.
1.Test condition: Based on Maximum Output Power.
2 .Test condition: Based on Maximum Drain Efficiency.
DF2H0060-20DF is a 20 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat1 @ 2600 MHz | 44.7 | dBm |
Power Gain2 @ 2600 MHz | 20 | dB |
Efficiency2 @ 2600 MHz | 76.5 | % |
Note: Measured in the DF2H0060-20DF application circuit, test condition: VDS = 48 V, IDQ = 50 mA,Pulse width = 100 μs, Duty cycle = 10 %.
1.Test condition: Based on Maximum Output Power.
2 .Test condition: Based on Maximum Drain Efficiency.
DF2H0060-20CF is a 20 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat1 @ 2600 MHz | 44.7 | dBm |
Power Gain2 @ 2600 MHz | 20 | dB |
Efficiency2 @ 2600 MHz | 76.5 | % |
Note: Measured in the DF2H0060-20CF application circuit, test condition: VDS = 48 V, IDQ = 50 mA,Pulse width = 100 μs, Duty cycle = 10 %.
1.Test condition: Based on Maximum Output Power.
2 .Test condition: Based on Maximum Drain Efficiency.
DXG2CH50A-450EF is a 450 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4800 MHz to 5000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 4800 | MHz |
Frequency (Max.) | 5000 | MHz |
Supply Voltage (Typ.) | 52 | V |
Psat (Typ.) | 56.6 | dBm |
Power Gain @ 4900 MHz | 11.8 | dB |
Efficiency @ 4900 MHz | 42.6 | % |
| ACPR @ 4900 MHz | -34.0/-47.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 52 V, IDQA = 2300 mA, VGSB = - 4.1 V, Pout = 47.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG1CH25P-320EF is a 320 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for industrial, scientific and medical applications at frequencies from 2400 MHz to 2500 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 2400 | MHz |
Frequency (Max.) | 2500 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat1 @ 2435 MHz | 55.3 | dBm |
Power Gain2 @ 2435 MHz | 14.6 | dB |
Efficiency2 @ 2435 MHz | 73.6 | % |
Note: Above Performance is the typical performance in Dynax's demo with the device soldered onto the heatsink, test condition:VDS= 50 V, VGS = - 4.8 V.
DXG1CH08A-540EF is a 540 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 758 MHz to 821 MHz cellular base station applications. It features input matching, wideband and a thermally-enhanced package.
Parameter | Value | Unit |
Frequency (Min.) | 758 | MHz |
Frequency (Max.) | 821 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 57.0 | dBm |
Power Gain @ 780 MHz | 18.0 | dB |
Efficiency @ 780 MHz | 58.0 | % |
ACPR @ 780 MHz | -28.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, Test condition: VDS = 48 V, IDQA = 500 mA, VGSB = - 4.5 V, Pout = 49.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2CH22A-520EF is a 520 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2110 MHz to 2170 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 2110 | MHz |
Frequency (Max.) | 2170 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 57.1 | dBm |
Power Gain @ 2140 MHz | 14.8 | dB |
Efficiency @ 2140 MHz | 58.2 | % |
ACPR @ 2140 MHz | -34.6 | dBC |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 200 mA, VGSB = - 5.5 V, Pout = 49.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF.ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG1CH27A-200EF is a 200 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 2496 MHz to 2690 MHz cellular base station applications. It features input matching, wide instantaneous bandwidth and an earless thermally-enhanced package.
Parameter | Value | Unit |
Frequency (Min.) | 2496 | MHz |
Frequency (Max.) | 2690 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 53.4 | dBm |
Power Gain @ 2595 MHz | 14.1 | dB |
Efficiency @ 2595 MHz | 50.0 | % |
ACPR @ 2595 MHz | -30.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 120 mA, VGSB = - 5.3 V, Pout = 45.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2CH27A-500EFV is a 500 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2500 MHz to 2700 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 2500 | MHz |
Frequency (Max.) | 2700 | MHz |
Supply Voltage (Typ.) | 47 | V |
56.7Psat (Typ.) | 56.7 | dBm |
Power Gain @ 2593 MHz | 15.0 | dB |
Efficiency @ 2593 MHz | 52.9 | % |
| ACPR @ 2593 MHz | -32.9 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 47 V, IDQA = 200 mA, VGSB = - 5.5 V, Pout = 47.2 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG1CH38A-200EF is a 200 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 3300 MHz to 3800 MHz cellular base station applications. It features input matching, wideband and a thermally-enhanced package.
Parameter | Value | Unit |
Frequency (Min.) | 3300 | MHz |
Frequency (Max.) | 3800 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 53.0 | dBm |
Power Gain @ 3500 MHz | 15.3 | dB |
Efficiency @ 3500 MHz | 45.0 | % |
ACPR @ 3500 MHz | -30.0 | dBC |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heat sink, test condition: VDS = 48 V, IDQA = 180 mA, VGSB = - 5.0 V, Pout = 44.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2CH38A-450EFV is a 450 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 3300 | MHz |
Frequency (Max.) | 3800 | MHz |
Supply Voltage (Typ.) | 50 | V |
Psat (Typ.) | 56.7 | dBm |
Power Gain @ 3500 MHz | 14.7 | dB |
Efficiency @ 3500 MHz | 46 | % |
| ACPR @ 3500 MHz | -34.2 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 50 V, IDQA = 450 mA, VGSB = - 5.1 V, Pout = 47.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG1CHD8A-F2EF is a 500 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 3300 | MHz |
| Frequency (Max.) | 3800 | MHz |
| Supply Voltage (Typ.) | 52 | V |
| Psat (Typ.) | 56.5 | dBm |
| Power Gain @ 3400 MHz | 14.0 | dB |
| Efficiency @ 3400 MHz | 42.0 | % |
| ACPR @ 3400 MHz | -28.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, Test condition: VDS = 52 V, IDQA = 400 mA, VGSB = - 5.2 V,Pout = 48.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2CH50A-200EF is a 200 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4800 MHz to 5000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 4800 | MHz |
Frequency (Max.) | 5000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 53.2 | dBm |
Power Gain @ 4900 MHz | 14.2 | dB |
Efficiency @ 4900 MHz | 44.5 | % |
| ACPR @ 4900 MHz | -28.5/-47 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 200 mA, VGSB = - 4.8 V, Pout = 44.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DOD1H0015-1800EF is a 1800 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for RF energy applications at frequencies from DC to 1500 MHz.
Parameter | Value | Unit |
Frequency (Min.) | DC | MHz |
Frequency (Max.) | 1500 | MHz |
Supply Voltage (Typ.) | 50 | V |
Psat (Typ.) | 61.5 | dBm |
Power Gain @ 650 MHz | 18.0 | dB |
Efficiency @ 650 MHz | 79.0 | % |
Note: Above Performance is the typical performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 50 V, IDQ = 200 mA, test signal is CW.
DOD1H2425-600EF is a 600 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for industrial, scientific and medical applications at frequencies from 2400 MHz to 2500 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 2400 | MHz |
Frequency (Max.) | 2500 | MHz |
Supply Voltage (Typ.) | 50 | V |
Psat (Typ.) | 57.4 | dBm |
Power Gain @ 2450 MHz | 14.7 | dB |
Efficiency @ 2450 MHz | 73.5 | % |
Note: Above Performance is the typical performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 50 V, VGS = - 4.8 V, test signal is CW.
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